• DocumentCode
    2320712
  • Title

    Influence of the composition of NbNx thin film field emitter array on the emission characteristics

  • Author

    Nagao, M. ; Ura, T. ; Gotoh, Y. ; Tsuji, H. ; Ishikawa, J.

  • Author_Institution
    Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
  • fYear
    1998
  • fDate
    19-24 July 1998
  • Firstpage
    306
  • Lastpage
    307
  • Abstract
    Transition metal nitride has a potential for stable emission because of its chemical inertness, low work function and high melting point. We fabricated the NbN/sub x/ thin film field emitter arrays at relatively low temperature (500/spl deg/C) by ion beam assisted deposition technique. This technique can control the nitrogen composition of the film by selecting the deposition parameters. In this work, the relationship between the nitrogen composition of the NbN/sub x/ and emission characteristics was investigated.
  • Keywords
    electron field emission; ion beam assisted deposition; niobium compounds; vacuum microelectronics; 500 C; NbN; NbN/sub x/ thin film field emitter array; electron emission; ion beam assisted deposition; nitrogen composition; transition metal nitride; Aging; Field emitter arrays; Ion beams; Niobium; Nitrogen; Sputtering; Stability; Substrates; Temperature; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1998. Eleventh International
  • Conference_Location
    Asheville, NC, USA
  • Print_ISBN
    0-7803-5096-0
  • Type

    conf

  • DOI
    10.1109/IVMC.1998.728770
  • Filename
    728770
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2320712