Title :
Heavy arsenic doping of silicon by molecular beam epitaxy
Author :
Liu, Xian ; Tang, Qiang ; Kamins, Theodore I. ; Harris, James S.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
As MOSFETs scale to deep-submicron dimensions, there has been an increasing demand for silicon epitaxial layers with abrupt doping profiles. For nanoscale devices, arsenic is an attractive n-type dopant because of its high solubility and low diffusivity, but suffers from surface segregation during epitaxy, making high- concentration incorporation with abrupt profiles difficult. In this paper we report results of arsenic incorporation in Si molecular beam epitaxy (MBE) using a unique combination of solid (As, Si) and gas (disilane) sources to achieve these goals.
Keywords :
MOSFET; arsenic; elemental semiconductors; heavily doped semiconductors; molecular beam epitaxial growth; segregation; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; MBE; MOSFETs; Si:As; deep-submicron dimensions; heavy doping; high solubility; low diffusivity; molecular beam epitaxy; n-type dopant; surface segregation; Computational Intelligence Society; Doping; Epitaxial growth; Laboratories; Molecular beam epitaxial growth; Photonics; Silicon; Solid state circuits; Surface fitting; Temperature;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037754
