Title :
Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters
Author :
Yoon, Young Joon ; Kim, Gi Bum ; Chi, Eung Joon ; Shim, Jae Yeob ; Baik, Hong Koo
Author_Institution :
Dept. of Metall. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
Cobalt silicide emitters showed the enhanced emission properties in I-V characteristics and long-term current stability, compared to bare silicon emitters. They are mainly caused by the increase of emission area and the formation of chemically stable surface of silicide emitters. Detailed results about the effects of phase and thickness of cobalt silicide on electron emission are discussed.
Keywords :
cobalt compounds; electron field emission; elemental semiconductors; silicon; I-V characteristics; Si-CoSi; cobalt silicide; current stability; electron emission; field emission; silicon emitter; surface coating; Annealing; Chemicals; Cobalt; Conductivity; Current measurement; Electron emission; Silicides; Silicon; Stability; Temperature;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728774
