In-plan self-organized two-dimensional-ordered GeSi islands grown on Si[001] by molecular beam epitaxy

The mechanisms that control the self-assembly of coherent, faceted three-dimensional (3D) islands in lattice-mismatched heteroepitaxial systems have been the subject of recent intense interest. For optical applications random arrangement of uniform-size islands is often adequate; however, for most electronic applications, such as single-electron devices, the islands must be positioned at least in one-dimensional ordering, even two-dimensional ordering is needed. We report a new method to grow in-plan 2-dimensional-ordered GeSi islands on Si [001] substrate by using low-temperature (LT) growth technique. The growth was carried out in a VG V80S MBE system.