Title :
Planar field emitters fabricated by sulfur-doped boron nitride
Author :
Yokota, Yuuko ; Tagawa, Shigeru ; Sugino, Takashi
Author_Institution :
Dept. of Electr. Eng., Osaka Univ., Japan
Abstract :
Fabrication of BN field emitters are tentatively attempted on sapphire substrates. In this paper, process technologies such as growth and etching of BN films are investigated. Electron emission is detected for a laterally fabricated field emitter.
Keywords :
boron compounds; electron field emission; plasma CVD coatings; sputter etching; sulphur; vacuum microelectronics; BN:S; PACVD; RIE; electron emission; etching; fabrication; growth; planar field emitter; sapphire substrate; sulfur-doped boron nitride; Boron; Electron emission; Etching; Fabrication; Optical films; Plasma applications; Plasma temperature; Semiconductor films; Substrates; Uninterruptible power systems;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728776
