1.3 /spl mu/m InGaAsN/GaAs edge emitting and vertical cavity surface emitting lasers grown by molecular beam epitaxy

Author

Peng, C.S. ; Jouhti, T. ; Konttinen, J. ; Li, W. ; Pessa, M.

Author_Institution

Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

63

Lastpage

64

Abstract

We has designed and fabricated edge-emitting InGaAsN/GaAs quantum well lasers operating at 1.32 /spl mu/m. The layer structure is grown by molecular beam epitaxy. Continuous-wave operation at low threshold current has been demonstrated at room temperature. We also demonstrated a photo-pumped 1.28 /spl mu/m continuous-wave vertical-cavity surface emitting laser grown in a single nucleation process by molecular beam epitaxy.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; optical fabrication; optical pumping; semiconductor lasers; surface emitting lasers; 1.28 micron; 1.32 micron; InGaAsN-GaAs; InGaAsN/GaAs edge emitting lasers; VCSEL; continuous-wave operation; layer structure; molecular beam epitaxy; photo-pumped vertical-cavity surface emitting laser; room temperature; single nucleation process; threshold current; vertical cavity surface emitting lasers; Diode lasers; Electrons; Gallium arsenide; Laser modes; Molecular beam epitaxial growth; Photonic band gap; Quantum well lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037760

Filename

1037760