Title :
Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs
Author :
Thorsell, M. ; Andersson, K. ; Fagerlind, M. ; Südow, M. ; Nilsson, P-Å ; Rorsman, N.
Author_Institution :
GHz Centre, Chalmers Univ. of Technol., Goteborg
Abstract :
The temperature dependence of the access resistances for AlGaN/GaN HEMTs is investigated. The self-heating is measured using infrared microscopy and the access resistances are extracted at different ambient temperatures. Their influence on the intrinsic small signal parameters is studied versus bias and ambient temperature.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; optical microscopy; semiconductor device models; thermal resistance; wide band gap semiconductors; AlGaN-GaN; access resistances; ambient temperature; bias temperature; high electron mobility transistors; infrared microscopy; intrinsic small signal parameters; self-heating; temperature dependence; Aluminum gallium nitride; Electrical resistance measurement; Gallium nitride; HEMTs; MODFETs; Microscopy; Radar; Temperature dependence; Thermal resistance; Transceivers; GaN; HEMT; Modelling; Small signal; Thermal;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008. Workshop on
Conference_Location :
Malaga
Print_ISBN :
978-1-4244-2645-4
Electronic_ISBN :
978-1-4244-2646-1
DOI :
10.1109/INMMIC.2008.4745703
