Effect of different PDAs and a PMA on the electrical performance of TiN/ZAZ/TiN MIM capacitors

Author

Weinreich, W. ; Seidel, K. ; Sundqvist, J. ; Czernohorsky, M. ; Kücher, P.

Author_Institution

Fraunhofer Center Nanoelectronic Technol., Dresden, Germany

fYear

2012

fDate

24-26 Sept. 2012

Firstpage

227

Lastpage

230

Abstract

ZrO₂-based MIM capacitors are used in various memory as well as for RF applications. Thus, material tuning is necessary to selectively optimize the electrical performance. In this paper, the C-V, J-V and reliability properties of Al-doped ZrO₂ MIM capacitors with TiN electrodes are compared for different anneals showing minor differences between PDA and PMA in N₂. However, there is a significant influence of a PDA in NH₃ that forms a two-phase system in the high-k layer.

Keywords

III-V semiconductors; MIM devices; annealing; capacitors; circuit tuning; electrodes; high-k dielectric thin films; integrated circuit metallisation; integrated circuit reliability; titanium compounds; zirconium compounds; C-V; J-V; MIM capacitor; PDA; PMA; RF application; TiN-ZrO₂:Al-TiN; electrical performance; electrode; high-k layer; material tuning; post deposition annealing; post metallization anneal; reliability property; two-phase system; Annealing; CMOS integrated circuits; Capacitors; Films; Nonuniform electric fields; System-on-a-chip; Tin; CET; MIM capacitor; N2; NH3; PDA; PMA; ZrO2; breakdown voltage; leakage current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International

Conference_Location

Grenoble

Print_ISBN

978-1-4673-1717-7

Type

conf

DOI

10.1109/ISCDG.2012.6360010

Filename

6360010