High performance of InGaP/InGaAs enhanced-mode PHEMT structures by gas source molecular beam epitaxy

Single-supply-voltage enhanced-mode PHEMTs have been attached more and more attention recently due to its applications in new generation wireless communication and automotive radar. Precise control over the gate groove deep etching process is a key issue for E-mode PHEMTs. According to the excellent etch selectivity of In/sub 0.49/Ga/sub 0.51/P/GaAs, we expect it may be a suitable material for E-mode PHEMT. In this article, GSMBE grown InGaP/GaAs E-mode PHEMT structures and E-mode PHEMT and related LNA circuits have been investigated. Results on the optimized structure design, growth conditions for materials and devices in particularly on the precise control InGaP composition, composition uniformity, and the P/As atomic mixing at the interface of InGaP/GaAs over the material growth process are presented.