Title :
InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 /spl mu/m
Author :
Boehm, G. ; Shau, R. ; Meyer, R. ; Amann, M.-C. ; Ortsiefer, M. ; Rosskopf, J. ; Mederer, F.
Author_Institution :
Walter Schottky Inst., Technische Univ. Munchen, Garching, Germany
Abstract :
Vertical-cavity surface-emitting lasers (VCSELs) are highly attractive light sources for future optical communication systems, high speed datacom transmission lines and gas sensing applications. The wavelength region from 1.3 to 2.0 /spl mu/m covers not only both wavelengths interesting for telecommunication (1.31 /spl mu/m and 1.55 /spl mu/m), but also several absorption lines of environmental gases (e.g. H/sub 2/O 1.38 /spl mu/m and 1.83 /spl mu/m, CH/sub 4/ 1.684 /spl mu/m, CO/sub 2/ 2.004 /spl mu/m). In this presentation, we discuss the suitability of the material system AlGaInAs/InP for this wavelength range as well as recent results concerning the device performance.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; surface emitting lasers; 1.3 to 2.0 micron; AlGaInAs-InP; AlGaInAs/InP; InP-based VCSEL technology; gas sensing applications; high speed datacom transmission lines; vertical-cavity surface-emitting lasers; Absorption; Gas lasers; Gases; Indium phosphide; Light sources; Optical fiber communication; Optical surface waves; Surface emitting lasers; Transmission lines; Vertical cavity surface emitting lasers;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037768