A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3 /spl mu/m lasers

Author

Spring Thorpe, A.J. ; Extavour, M. ; Griswold, E.M. ; Shen, A. ; White, J.K. ; Hinzer, K.

Author_Institution

Optical Components, Nortel Networks, Ottawa, Ont., Canada

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

83

Lastpage

84

Abstract

As part of an investigation of the optimum growth conditions for the preparation of strained MQW InAlGaAs lasers for operation at 1.3 /spl mu/m, one to six quantum well structures, with up to 1.4% strain, have been grown at temperatures in the range 470 to 585/spl deg/C. Deposition of both digital and bulk alloy layers was carried out in a V80H system, on two- and three inch n-InP substrates, and growth temperatures were monitored using absorption band-edge thermometry. The basic MQW structures consisted of 10 nm lattice matched confinement layers of digital alloy InAlGaAs (/spl sim/1.0 /spl mu/m bandgap), or bulk InAlAs, bounding 6 nm layers of digital alloy In/sub 0.73/Al/sub 0.165/Ga/sub 0.105/As.

Keywords

III-V semiconductors; X-ray diffraction; aluminium compounds; energy gap; gallium arsenide; indium compounds; interface states; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor growth; transmission electron microscopy; 1.3 /spl mu/m lasers; 1.3 micron; 470 to 585 C; 6 nm; InAlGaAs; absorption band-edge thermometry; forbidden temperature region; growth temperatures; lattice matched confinement layers; planar strained InAlGaAs MQW structures growth; Absorption; Capacitive sensors; Digital alloys; Lattices; Monitoring; Quantum well devices; Quantum well lasers; Temperature distribution; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037770

Filename

1037770