Title :
Metallic nanowire filled membrane for slow wave microstrip transmission lines
Author :
Franc, A.-L. ; Podevin, F. ; Cagnon, L. ; Ferrari, P. ; Serrano, A. ; Rehder, G.
Author_Institution :
IMEP-LAHC, Grenoble, France
Abstract :
A new concept of slow wave microstrip transmission lines (SW μTL) dedicated to mmW and sub-mmW applications (100 GHz and further) is described herein. The microstrip is deposited on a specific substrate consisting in a metallic nanowires-filled membrane (MnM) of alumina covered with a thin top layer of silicon oxide. The slow wave effect is obtained thanks to metallic nanowires that capture the electric field while the magnetic field can extend in the whole substrate. Despite of the strong miniaturization expected, such SW μTLs should reach a quality factor five times higher than the one obtained with a conventional microstrip line (without nanowires). Such SW μTL can act as interconnecting paths if the MnM substrate is used as a 3D-interposer.
Keywords :
Q-factor; alumina; electric fields; integration; magnetic fields; membranes; microstrip lines; nanowires; silicon compounds; slow wave structures; submillimetre wave devices; transmission lines; 3D-integration; 3D-interposer; MnM substrate; electric field; frequency 100 GHz; magnetic field; metallic nanowire-filled membrane; quality factor; slow wave effect; slow wave microstrip transmission lines; submmW application; CMOS integrated circuits; CMOS technology; Silicon; Time frequency analysis; 3D-integration; microstrip transmission lines; millimeter-waves; nanowires; slow wave transmission lines;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-1717-7
DOI :
10.1109/ISCDG.2012.6360022
