Low current-blocking InGaAs/InP DHBT grown by solid-source MBE

Author

Chen, Shu-Han ; Lee, Meng-Lin ; Tseng, Ming-Yuan ; Liu, Wei-Sheng ; Chyi, Jen-Inn

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

95

Lastpage

96

Abstract

Double heterojunction bipolar transistor (DHBT) of InP and related materials is getting more attention due to its potential applications in 40 Gbps optical communications and low voltage radio frequency integration circuits. For these applications, the DHBT has to have low offset voltage, high breakdown voltage while with low current blocking effect. In this work, we have demonstrated that InGaAs/InP DHBT satisfying the aforementioned characteristics can be obtained by using InGaAs spacers at the BE and BC junctions, and a highly doped n-type InP layer in the collector region. Since the epilayers are grown by solid source molecular beam epitaxy, the Be-doped base layer is of high carrier concentration, which is shown to be effective in reducing the current blocking effect.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 490 C; 520 C; 75 micron; InGaAs spacers; InGaAs-InP; double heterojunction bipolar transistor; high breakdown voltage; high carrier concentration; low current-blocking InGaAs/InP DHBT; low offset voltage; solid-source MBE; Circuits; DH-HEMTs; Double heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low voltage; Molecular beam epitaxial growth; Optical fiber communication; Optical materials; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037776

Filename

1037776