Device and materials characteristics of MBE-grown InAs bipolar transistors

Author

Averett, K.L. ; Wu, X. ; Maimon, S. ; Koch, M.W. ; El-Naggar, A. ; Wicks, G.W.

Author_Institution

Dept. of Phys. & Astron., Rochester Univ., NY, USA

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

101

Lastpage

102

Abstract

The large electron mobility and high saturation velocity of InAs make it a promising material for the operation of high speed electronic devices. As semiconductor scaling continues to reduce device size, the smaller bandgap III-Vs, such as InAs, play a more prominent role in the design of new low power devices. The present work involves materials and device investigations related to InAs-based bipolar transistors grown by molecular beam epitaxy (MBE).

Keywords

III-V semiconductors; bipolar transistors; electron mobility; indium compounds; low-power electronics; molecular beam epitaxial growth; semiconductor growth; InAs; MBE; MBE-grown InAs bipolar transistors; bipolar transistors; device size; electron mobility; high saturation velocity; high speed electronic devices; low power devices; materials characteristics; molecular beam epitaxy; semiconductor scaling; Bipolar transistors; Charge carrier processes; Electron optics; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Optical materials; Physics; Semiconductor device manufacture; Semiconductor materials; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037779

Filename

1037779