Terrace and reconstruction dynamics on the growing GaAs[001] surface studied by synchrotron X-ray diffraction

Author

Braun, Wolfgang ; Jenichen, Bernd ; Kaganer, Vladimir M. ; Shtukenherg, A.G. ; Däweritz, Lutz ; Ploog, Klaus H.

Author_Institution

Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

105

Lastpage

106

Abstract

Summary form only given. Using a newly-built dedicated beamline at the synchrotron BESSY II in Berlin, we have studied the growth dynamics during GaAs[001] homoepitaxy. Due to a characteristic shift of the surface unit cell from layer to layer, growth oscillations at or close to MBE-typical growth rates can be observed in situ using X-ray diffraction at grazing incidence and exit angles. We also compare RHEED and X-ray diffraction oscillations measured simultaneously.

Keywords

III-V semiconductors; X-ray diffraction; gallium arsenide; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; surface reconstruction; synchrotron radiation; GaAs; GaAs[001] homoepitaxy; MBE-typical growth rates; RHEED; growing GaAs[001] surface; growth oscillations; reconstruction dynamics; surface unit cell; synchrotron BESSY II; synchrotron X-ray diffraction; terrace dynamics; Gallium arsenide; Lattices; Linearity; Reflection; Surface reconstruction; Synchrotrons; Temperature; Time measurement; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037781

Filename

1037781