DocumentCode
2321309
Title
Complete characterisation of LF and RF dynamics at device terminals within microwave circuits
Author
Avolio, Gustavo ; Schreurs, Dominique ; Nauwelaers, B. ; Pailloncy, Guillaume ; Bossche, Marc
Author_Institution
Div. ESAT-TELEMIC, K.U.Leuven, Leuven
fYear
2008
fDate
24-25 Nov. 2008
Firstpage
97
Lastpage
100
Abstract
This work presents a way to determine the complete response, encompassing both the low- and high-frequency components, at the device terminals within a microwave circuit. The measurement set-up is based on an extension of the large-signal network analyser. Experimental results on a GaAs power amplifier are analysed.
Keywords
III-V semiconductors; gallium arsenide; microwave integrated circuits; network analysers; power amplifiers; GaAs; device terminals; high-frequency components; large-signal network analyser; low-frequency components; microwave circuits; power amplifier; radiofrequency dynamics; Calibration; Current measurement; Frequency response; Gallium arsenide; Microwave circuits; Microwave devices; Power amplifiers; Power measurement; Radio frequency; Voltage; device characterisation; large-signal measurements; long term memory effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008. Workshop on
Conference_Location
Malaga
Print_ISBN
978-1-4244-2645-4
Electronic_ISBN
978-1-4244-2646-1
Type
conf
DOI
10.1109/INMMIC.2008.4745725
Filename
4745725
Link To Document