DocumentCode
2321326
Title
A new test bench to measure dynamic output I/V characteristics of FETs
Author
Ciccognani, W. ; Giannini, F. ; Limiti, E. ; Longhi, P.E. ; Nanni, A. ; Serino, A.
Author_Institution
Dept. of Electron. Eng., Univ. di Roma Tor Vergata, Rome
fYear
2008
fDate
24-25 Nov. 2008
Firstpage
101
Lastpage
103
Abstract
In this paper a new test bench for the measurement of FETs dynamic output I/V characteristics is presented. The characterization is carried out generating asymmetrical voltage signals at the gate of the device while the load at the drain terminal is varied. The experimental results obtained performing on-wafer measurements of a 1 mm GaAs PHEMT using the proposed test bench, successfully compare with those carried out utilizing a conventional pulsed system.
Keywords
electric current measurement; field effect transistors; gallium arsenide; voltage measurement; FET; GaAs PHEMT; asymmetrical voltage signals; drain terminal; nonlinear microwave integrated circuits; Calibration; Electronic equipment testing; FETs; Frequency estimation; Pulse measurements; Radio frequency; Sampling methods; System testing; Temperature; Voltage; Dispersion phenomena; I/V characterisation; dynamic measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008. Workshop on
Conference_Location
Malaga
Print_ISBN
978-1-4244-2645-4
Electronic_ISBN
978-1-4244-2646-1
Type
conf
DOI
10.1109/INMMIC.2008.4745726
Filename
4745726
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