DocumentCode :
2321326
Title :
A new test bench to measure dynamic output I/V characteristics of FETs
Author :
Ciccognani, W. ; Giannini, F. ; Limiti, E. ; Longhi, P.E. ; Nanni, A. ; Serino, A.
Author_Institution :
Dept. of Electron. Eng., Univ. di Roma Tor Vergata, Rome
fYear :
2008
fDate :
24-25 Nov. 2008
Firstpage :
101
Lastpage :
103
Abstract :
In this paper a new test bench for the measurement of FETs dynamic output I/V characteristics is presented. The characterization is carried out generating asymmetrical voltage signals at the gate of the device while the load at the drain terminal is varied. The experimental results obtained performing on-wafer measurements of a 1 mm GaAs PHEMT using the proposed test bench, successfully compare with those carried out utilizing a conventional pulsed system.
Keywords :
electric current measurement; field effect transistors; gallium arsenide; voltage measurement; FET; GaAs PHEMT; asymmetrical voltage signals; drain terminal; nonlinear microwave integrated circuits; Calibration; Electronic equipment testing; FETs; Frequency estimation; Pulse measurements; Radio frequency; Sampling methods; System testing; Temperature; Voltage; Dispersion phenomena; I/V characterisation; dynamic measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008. Workshop on
Conference_Location :
Malaga
Print_ISBN :
978-1-4244-2645-4
Electronic_ISBN :
978-1-4244-2646-1
Type :
conf
DOI :
10.1109/INMMIC.2008.4745726
Filename :
4745726
Link To Document :
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