Resistive switching behavior in TiN/HfO2/Ti/TiN devices

Author

Walczyk, D. ; Bertaud, T. ; Sowinska, M. ; Lukosius, M. ; Schubert, M.A. ; Fox, A. ; Wolansky, D. ; Scheit, A. ; Fraschke, M. ; Schoof, G. ; Wolf, Ch ; Kraemer, R. ; Tillack, B. ; Korolevych, R. ; Stikanov, V. ; Wenger, Ch ; Schroeder, T. ; Walczyk, Ch

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2012

fDate

24-26 Sept. 2012

Firstpage

143

Lastpage

146

Abstract

This work reports the bipolar resistive switching behavior of more than 100 back-end-of-line (BEOL) integrated 600×600nm² TiN/HfO₂/Ti/TiN MIM devices in a 4 kbit memory array. Reliable current-voltage switching characteristics were only observed for devices with a thickness ratio of 1 (10 nm HfO₂/10nm Ti), indicating the importance of the interface chemistry of the Ti/HfO₂ interface. Moreover, the devices show good inter-cell uniformity and thus demonstrate promising prospects for embedded non-volatile memory (eNVM) applications.

Keywords

MIM devices; hafnium compounds; random-access storage; titanium compounds; TiN-HfO₂-Ti-TiN; back-end-of-line integrated MIM devices; bipolar resistive switching behavior; current-voltage switching characteristics; eNVM applications; embedded nonvolatile memory applications; intercell uniformity; interface chemistry; memory array; size 10 nm; Facsimile; Hafnium oxide; Switches; 4 kbit memory array; HfO2; MIM; RRAM;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International

Conference_Location

Grenoble

Print_ISBN

978-1-4673-1717-7

Type

conf

DOI

10.1109/ISCDG.2012.6360035

Filename

6360035