DocumentCode :
2321384
Title :
Effects of defects and impurities on electronic properties in CoSb 3
Author :
Akai, Koji ; Kurisu, Hiroki ; Shimura, Toshiya ; Matsuura, Mitsuru
Author_Institution :
Fac. of Eng., Yamaguchi Univ., Japan
fYear :
1997
fDate :
26-29 Aug 1997
Firstpage :
334
Lastpage :
337
Abstract :
The band structure and the density of states of doped and non-doped CoSb3 were computed by using the supercell. The computation has been done by the linear muffin-tin orbital method with non-overlapped-muffin-tin spheres. Based on the computational results, some doping effects were discussed
Keywords :
band structure; cobalt compounds; defect states; electronic density of states; impurity states; muffin-tin potential; CoSb3; band structure; defects; density of states; electronic properties; impurities; linear muffin-tin orbital method; non-overlapped-muffin-tin spheres; supercell; Extraterrestrial measurements; Lattices; Microscopy; Orbital calculations; Periodic structures; Semiconductor device doping; Semiconductor impurities; Thermoelectricity; Tin alloys;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
ISSN :
1094-2734
Print_ISBN :
0-7803-4057-4
Type :
conf
DOI :
10.1109/ICT.1997.667147
Filename :
667147
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2321384
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