Title :
MBE growth and interfacial reaction control of ferromagnetic metal/GaAs heterostructures
Author :
Palmstrøm, C.J. ; Carr, D.M. ; Dong, J.W. ; Dong, X. ; Lu, J. ; Lüdge, K. ; McKernan, S. ; Schultz, B.D. ; Shih, T.C. ; Xie, J.Q. ; Xin, Y.
Author_Institution :
Dept. of Chem. Eng. & Mater. Sci., Minnesota Univ., Minneapolis, MN, USA
Abstract :
Summary form only given. We have investigated the epitaxial growth of a number of Heusler alloys (Ni,Co)/sub 2/Mn(Al,Ga,ln,Ge) and Fe/sub l-x/Co/sub x/ on Ga/sub 1-x/In/sub x/As. X-ray diffraction and cross-sectional TEM indicated single crystal ferromagnetic film growth. The magnetic properties were measured by vibrating sample and superconducting quantum interference device magnetometers. The Heusler alloy heterostructures showed in-plane magnetization and Curie temperatures /spl sim/300K. The effects of growth conditions and the use of interfacial layers on the chemical ordering, interfacial reactions and the structural and magnetic properties will be discussed.
Keywords :
Curie temperature; III-V semiconductors; X-ray diffraction; chemical interdiffusion; cobalt alloys; ferromagnetic materials; gallium arsenide; interface magnetism; iron alloys; magnetisation; molecular beam epitaxial growth; semiconductor-metal boundaries; spin polarised transport; transmission electron microscopy; 300 K; Curie temperatures; FeCo; GaInAs; Heusler alloys; MBE growth; X-ray diffraction; chemical ordering; cross-sectional TEM; ferromagnetic metal/GaAs heterostructures; growth conditions; in-plane magnetization; interfacial layers; interfacial reaction control; interfacial reactions; magnetic properties; single crystal ferromagnetic film growth; spin injection; Cobalt alloys; Epitaxial growth; Gallium alloys; Gallium arsenide; Iron alloys; Magnetic films; Magnetic properties; Molecular beam epitaxial growth; Superconducting films; X-ray diffraction;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037787
