Title :
Confined optical phonons in AlAs/AlP strained short-period superlattices
Author :
Nagano, M. ; Sugie, Ryuichi
Author_Institution :
Komae Res. Lab., Central Res. Inst. of Electr. Power Ind., Tokyo, Japan
Abstract :
Summary form only given. Strained layer superlattices made from lattice-mismatched constituents have attracted great interest due to their unique electronic and optical properties. AlAs/AlP superlattices have a relatively large lattice mismatch between AlAs and AlP (3.7%). Raman scattering can be used to investigate the phonon spectra of short-period strained layer superlattices (SLs) because the phonon is sensitive to structure details. In this letter, we report Raman scattering results of AlAs/AlP SLs and compare the experimental spectra with the results of simulations.
Keywords :
III-V semiconductors; Raman spectra; aluminium compounds; internal stresses; phonon spectra; semiconductor superlattices; AlAs-AlP; AlAs/AlP superlattices; Raman scattering; confined optical phonons; lattice-mismatch; phonon spectra; short-period strained layer superlattices; strained layer superlattices; Capacitive sensors; Frequency; Gallium arsenide; Laser sintering; Optical buffering; Optical scattering; Optical sensors; Optical superlattices; Phonons; Raman scattering;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037793
