DocumentCode
2321523
Title
Experimental and numerical methods for evaluation of interface cracks in electronics systems
Author
Keller, Jürgen ; Schulz, Marcus ; Wunderle, Bernhard ; Auersperg, Juergen ; Michel, Bernd
Author_Institution
AMIC Angewandte Micro-Messtech. GmbH, Berlin, Germany
fYear
2012
fDate
24-26 Sept. 2012
Firstpage
113
Lastpage
118
Abstract
The ongoing development of highly integrated electronic packages leads to a steadily increasing number of material interfaces within a package. In combination with increasing harshness (vibration, humidity, temperature) of the system environment the reliability of such systems is often dominated by interface fracture. Therefore interface fracture mechanics is one of the main focuses of electronics reliability research. The authors present a combined simulative and experimental method for crack tip location determination and crack evaluation of interface specimens. The specimens are loaded in a testing apparatus which is an advancement of a mixed mode bending test. Based on crack length measurements and Finite Element Analysis critical energy release rates can be axtracted in a fast and inexpensive method. In addition the authors present a simulative approach to analyze the pumping and protrusion of copper-TSVs during thermal cycling. Cracking and delamination risks caused by the elevated temperature variation during BEoL ILD deposition are investigated with the help of fracture mechanics approaches.
Keywords
bending; cracks; delamination; finite element analysis; fracture; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; test equipment; three-dimensional integrated circuits; BEoL ILD deposition; copper-TSV protrusion; crack length measurements; crack tip location determination; critical energy release rates; delamination risks; electronic reliability; electronics systems; finite element analysis; highly integrated electronic packages; interface crack evaluation; interface fracture mechanic approach; material interfaces; mixed mode bending test; numerical methods; pumping analysis; temperature variation; testing apparatus; thermal cycling; Correlation; Reliability; Silicon; TSV; deformation measurement; electronic packaging; fracture mechanics; gray scale correlation; interface cracks; mixed mode bending; mode mixity; protrusion; residual stresses; trough silicon via;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
Conference_Location
Grenoble
Print_ISBN
978-1-4673-1717-7
Type
conf
DOI
10.1109/ISCDG.2012.6360042
Filename
6360042
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