• DocumentCode
    2321535
  • Title

    Development of FGM thermoelectric materials in Japan-the state of the art

  • Author

    Shiota, Ichiro ; Nishida, Isao A.

  • Author_Institution
    Dept, of Environ. Chem. Eng., Kogakuin Univ., Tokyo, Japan
  • fYear
    1997
  • fDate
    26-29 Aug 1997
  • Firstpage
    364
  • Lastpage
    370
  • Abstract
    Two times higher performance than a traditional thermoelectric material can be expected if the proper carrier concentration gradient is tailored to fit the temperature gradient. Performing a stepwise change of carrier concentration is also a method for practical application. That is a fundamental concept of energy converting functionally graded materials (FGM). It is essential to choose a proper material for each part to fit the temperature gradient. The proper material is a material with the proper carrier concentration and a proper compound to match the temperature of each part along the temperature gradient. Joining of these FGM materials and fitting electrodes with FGM interfaces are also core techniques, because thermal stress relaxation caused by the difference of thermal expansion coefficients is important at a high temperature. Joining two Bi2Te3 samples with carrier concentrations nc of 1.0 and 4.5×1025 was done by the ordinal soldering technique or diffusion bonding. The specific temperature range of the Seebeck coefficient α for the joined Bi2Te3 is extended from 50 to 100 K, and the value of α at the valley between the two materials with different nc was higher than both materials. The sintered n-type PbTe FGM with 3 layers of nc =3.51, 2.60 and 2.26×1025 was prepared by hot pressing. The effective maximum power Pmax of the FGM at the temperature difference of ΔT=310 K is 150 Wm/m2 and is about 7% larger than that of the layer with nc=3.51×10 25 whose Pmax is the greatest in all layers
  • Keywords
    IV-VI semiconductors; Seebeck effect; bismuth compounds; carrier density; hot pressing; joining processes; lead compounds; reviews; semiconductor materials; sintering; soldering; stress relaxation; thermal expansion; thermal stresses; thermoelectric power; Bi2Te3; PbTe; Seebeck coefficient; carrier concentration gradient; diffusion bonding; effective maximum power; electrodes; energy conversion; figure-of-merit; functionally graded materials; hot pressing; interfaces; joining; ordinal soldering; sintered n-type PbTe; temperature gradient; temperature range; thermal expansion coefficients; thermal stress relaxation; thermoelectric materials; Bismuth; Diffusion bonding; Electrodes; Joining materials; Soldering; Tellurium; Temperature; Thermal expansion; Thermal stresses; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
  • Conference_Location
    Dresden
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-4057-4
  • Type

    conf

  • DOI
    10.1109/ICT.1997.667154
  • Filename
    667154