DocumentCode
2321577
Title
Theoretical study of In surface kinetics during MBE growth of InGaAs and InGaN
Author
Stanley, Irena ; Coleiny, Golshan ; Venkat, Rama
Author_Institution
Dept. of Electr. & Comput. Eng., Nevada Univ., Las Vegas, NV, USA
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
137
Lastpage
138
Abstract
A rate equation model is employed to investigate the In desorption rate in InGaAs and In segregation rate in InGaN. The results, which are in good agreement with the experiment, suggest that the activation energies for In desorption in InGaAs from the physisorbed layer of In and the surface of the crystal, are 0.18 eV and 2.6 eV, respectively and the activation energy for In segregation in InGaN is 2.9 eV.
Keywords
III-V semiconductors; desorption; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; surface segregation; In; In desorption rate; In segregation rate; In surface kinetics; InGaAs; InGaN; MBE growth; activation energy; physisorbed layer; rate equation model; Equations; Indium gallium arsenide; Intelligent networks; Kinetic theory; Temperature dependence; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037797
Filename
1037797
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