Title :
RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer
Author :
Nishio, Susumu ; Nishikawa, Atsushi ; Katayama, Ryuji ; Onabe, Kentaro ; Shhki, Y.
Author_Institution :
The University of Tokyo
Abstract :
InAsl-xNx epilayers even with x=0.0353 were successhlly grown on GaAs (001) substrates by using the ~0.8μm thick InAs buffer layer. The N concentration was well controlled by altering Tg between 420°C and 510°C. With decreasing Tg the N concentration of the InAsN layer increased. The cross-sectional SEM and AFM images indicate that the fairly flat surface and interface of InAsN epilayer were obtained.
Keywords :
Atomic force microscopy; Buffer layers; Gallium arsenide; Nitrogen; Photonic band gap; Plasma temperature; Rough surfaces; Scanning electron microscopy; Surface roughness;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037802
