mm-wave phased arrays in silicon with integrated antennas

Author

Babakhani, A. ; Rutledge, D.B. ; Hajimiri, A.

fYear

2007

fDate

9-15 June 2007

Firstpage

4369

Lastpage

4372

Abstract

This work demonstrates W-band integrated dipole antennas and a four channel phased transceiver implemented in IBM 130 nm silicon germanium BiCMOS process. The chip includes the complete receiver, transmitter, signal generation blocks, phase shifters, and on-chip dipole antennas. A hemispherical silicon lens with diameter of about one inch is also used to remove the substrate modes. Measurement results show a maximum antenna gain of about +8 dB.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; antenna phased arrays; dipole antenna arrays; elemental semiconductors; lenses; millimetre wave antennas; silicon; transceivers; Si-Ge; W-band integrated dipole antennas; four channel phased transceiver; gain 8 dB; hemispherical silicon lens; integrated antennas; millimeter-wave phased arrays; on-chip dipole antennas; phase shifters; receiver; signal generation blocks; silicon germanium BiCMOS process; size 130 nm; substrate modes; transmitter; Antenna arrays; BiCMOS integrated circuits; Dipole antennas; Germanium silicon alloys; Phase shifters; Phased arrays; Signal generators; Silicon germanium; Transceivers; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium, 2007 IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-0877-1

Electronic_ISBN

978-1-4244-0878-8

Type

conf

DOI

10.1109/APS.2007.4396510

Filename

4396510