Arsenic pressure dependence of surface migration length of As/sub 4/ molecules during molecular beam epitaxy of GaAsP on [411]A GaAs substrate

Summary form only given. The study of the surface migration length of As/sub 4/ molecules during molecular beam epitaxy (MBE) of GaAs under various growth conditions is very important to understand the growth mechanism of MBE. Recently, we reported that the surface migration length of As/sub 4/ molecules strongly depends on the substrate orientation and is much longer (10 /spl sim/ 30 /spl mu/m) than that of Ga atoms (/spl cong/ 1 /spl mu/m) (Tatsuoka et al. (2000; 2001)). The migration length of As/sub 4/ molecules on the [411]A substrate, /spl lambda//sub [411]A/, changes as exp(-Ea/k/sub B/T) with a small activation energy of Ea = 0.2 eV. In this work, we investigated the arsenic pressure dependence of /spl lambda//sub [411]A/ for the first time, and found that /spl lambda//sub [411]A/ is strongly dependent on the arsenic (As/sub 4/) pressure (P/sub As4/).