Title :
A simple model for MBE growth controlled by group III atom migration
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
A model that simulates the behaviour of group III atoms of various migration lengths is presented. The program operates under As rich conditions typical for MBE, so a group V atom will be placed immediately above a group III atom once that group III atom has bonded into the crystal. The model has no information about bond angles. Growth is controlled by the interaction of the group III atoms through their migration length and a requirement to migrate to a position to increase the number of their nearest neighbours.
Keywords :
III-V semiconductors; bond angles; molecular beam epitaxial growth; semiconductor growth; As rich conditions; MBE growth; bond angles; group III atom migration control; migration length; Artificial intelligence; Atomic layer deposition; Atomic measurements; Bonding; Electron mobility; Java; Lattices; Read-write memory; Reflection; Scattering;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037811
