DocumentCode
2321847
Title
A simple model for MBE growth controlled by group III atom migration
Author
Holland, M.C.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
165
Lastpage
166
Abstract
A model that simulates the behaviour of group III atoms of various migration lengths is presented. The program operates under As rich conditions typical for MBE, so a group V atom will be placed immediately above a group III atom once that group III atom has bonded into the crystal. The model has no information about bond angles. Growth is controlled by the interaction of the group III atoms through their migration length and a requirement to migrate to a position to increase the number of their nearest neighbours.
Keywords
III-V semiconductors; bond angles; molecular beam epitaxial growth; semiconductor growth; As rich conditions; MBE growth; bond angles; group III atom migration control; migration length; Artificial intelligence; Atomic layer deposition; Atomic measurements; Bonding; Electron mobility; Java; Lattices; Read-write memory; Reflection; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037811
Filename
1037811
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