Exploration on sub-nanosecond spin torque random access memory

A key attribute that spin torque random access memory (SPRAM) offers as advanced nonvolatile memory is the fast read and write performance. In this paper, based upon model and experiment, we study SPRAM switching speed under switching variation constraints. We analyze factors limiting SPRAM switching speed and examine possibilities that lead SPRAM speed up to sub-nanosecond region. We explore paths that are different from direct scaling down approaches. Particularly we quantify magnetization relaxation and magnetic element temperature effects on SPRAM switching speed. We suggest that linear magnetization reversal mechanism at elevated temperature provides a path that could lead to sub-nanosecond SPRAM with well controlled switching time variations.