Antimony segregation in the oxidation of strained AlAsSb interlayers

Author

Andrews, A.M. ; Speck, J.S.

Author_Institution

Dept. of Mater., California Univ., Santa Barbara, CA, USA

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

181

Lastpage

182

Abstract

Lateral wet oxidation of AlAs/sub 1-x/Sb/sub x/ compounds is of crucial importance to the fabrication of high-efficiency electronic devices on InP substrates. Lateral oxidation has proved essential in vertical-cavity surface emitting lasers (VCSELs). A combined optical and electrical aperture is created by partially oxidizing the epilayer, reducing losses at the surface and improving the lasing efficiency. Also, the oxidation of the underlying material below transistors enables oxide gate insulators and device isolation.

Keywords

III-V semiconductors; aluminium compounds; arsenic compounds; insulated gate field effect transistors; semiconductor epitaxial layers; surface emitting lasers; surface segregation; AlAs/sub 1-x/Sb/sub x/; InP; VCSEL; epilayer; high-efficiency electronic devices; lateral wet oxidation; oxide gate insulators; segregation; transistors; vertical-cavity surface emitting lasers; Apertures; Indium phosphide; Insulation; Optical device fabrication; Optical losses; Optical materials; Oxidation; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037819

Filename

1037819