DocumentCode
2322111
Title
Beyond the datasheet: Using test beds to probe non-volatile memories´ dark secrets
Author
Grupp, Laura M. ; Caulfield, Adrian M. ; Coburn, Joel ; Davis, John D. ; Swanson, Steven
Author_Institution
Univ. of California, San Diego, CA, USA
fYear
2010
fDate
6-10 Dec. 2010
Firstpage
1930
Lastpage
1935
Abstract
Non-volatile memories (such as NAND flash and phase change memories) have the potential to revolutionize computer systems. However, these technologies have complex behavior in terms of performance, reliability, and energy consumption that make fully exploiting their potential a complicated task. As device engineers push bit densities higher, this complexity will only increase. Managing and exploiting the complex and at times surprising behavior of these memories requires a deep understanding of the devices grounded in experimental results. Our research groups have developed several hardware test beds for flash and other memories that allow us to both characterize these memories and experimentally evaluate their performance on full-scale computer systems. We describe several of these test bed systems, outline some of the research findings they have enabled, and discuss some of the methodological challenges they raise.
Keywords
logic testing; random-access storage; full-scale computer systems; nonvolatile memories; test bed systems;
fLanguage
English
Publisher
ieee
Conference_Titel
GLOBECOM Workshops (GC Wkshps), 2010 IEEE
Conference_Location
Miami, FL
Print_ISBN
978-1-4244-8863-6
Type
conf
DOI
10.1109/GLOCOMW.2010.5700280
Filename
5700280
Link To Document