Title :
The effect of as incorporation on phase separation in GaAs/GaSb short period superlattices
Author :
Dorin, C. ; Wauchope, C. ; Millunchick, J. Mirecki
Author_Institution :
Dept. of Mater. Sci. & Eng., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Spontaneous phase separation in GaAs/sub n//GaSb/sub m/ short period superlattices (SPS) deposited on [001] InP substrates grown by Molecular Beam Epitaxy (MBE) is investigated as a function of As species and growth temperature. Structures grown with As/sub 4/ and 1\n\n\t\t
Keywords :
III-V semiconductors; X-ray diffraction; gallium arsenide; gallium compounds; molecular beam epitaxial growth; phase separation; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; 400 to 460 C; As incorporation effect; GaAs-GaSb; GaAs/GaSb short period superlattices; InP; MBE; RHEED; [001] InP substrates; cross section transmission electron micrograph; molecular beam epitaxy; phase separation; reflection high energy electron diffraction; Capacitive sensors; Dispersion; Electrons; Gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Substrates; Superlattices; Temperature; X-ray imaging;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037828
