DocumentCode
2322128
Title
The effect of as incorporation on phase separation in GaAs/GaSb short period superlattices
Author
Dorin, C. ; Wauchope, C. ; Millunchick, J. Mirecki
Author_Institution
Dept. of Mater. Sci. & Eng., Michigan Univ., Ann Arbor, MI, USA
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
199
Lastpage
200
Abstract
Spontaneous phase separation in GaAs/sub n//GaSb/sub m/ short period superlattices (SPS) deposited on [001] InP substrates grown by Molecular Beam Epitaxy (MBE) is investigated as a function of As species and growth temperature. Structures grown with As/sub 4/ and 1\n\n\t\t
Keywords
III-V semiconductors; X-ray diffraction; gallium arsenide; gallium compounds; molecular beam epitaxial growth; phase separation; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; 400 to 460 C; As incorporation effect; GaAs-GaSb; GaAs/GaSb short period superlattices; InP; MBE; RHEED; [001] InP substrates; cross section transmission electron micrograph; molecular beam epitaxy; phase separation; reflection high energy electron diffraction; Capacitive sensors; Dispersion; Electrons; Gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Substrates; Superlattices; Temperature; X-ray imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037828
Filename
1037828
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