DocumentCode
2322147
Title
A monolithic smart switching cell targeted to a wide range of low power high density applications
Author
Finco, S. ; Guilherme, J. ; Behrens, F.H. ; Simas, M. I Castro
Author_Institution
Fundacao Centro Tecnol Para Inf., CTI, Sao Paulo, Brazil
fYear
1994
fDate
20-25 Jun 1994
Firstpage
457
Abstract
A smart power switching cell to be fabricated with standard CMOS technologies was developed, in view to obtain a versatile, high performance and low cost basic building block, suitable for a wide range of low power applications. This switching cell merges together two transistors, connected in a low-side/high-side switch configuration, with specific control and protection circuitries. These transistors are NMOS medium-voltage lateral structures, which use the lightly doped drain concept and are targeted to handle currents up to 2A and to support 25 V, at OFF state. Experimental results on different topologies show its applicability on portable systems power supplies. Their performance proves the ability of standard CMOS technologies to implement smart power circuits
Keywords
CMOS integrated circuits; insulated gate field effect transistors; monolithic integrated circuits; power supplies to apparatus; protection; semiconductor switches; switching circuits; 2 A; 25 V; CMOS technologies; NMOS medium-voltage lateral structures; control circuitry; lightly doped drain concept; low power high density applications; low-side/high-side switch configuration; monolithic smart switching cell; protection circuitry; smart power switching cell; CMOS technology; Circuit topology; Costs; MOS devices; Medium voltage; Power supplies; Power system protection; Standards development; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, PESC '94 Record., 25th Annual IEEE
Conference_Location
Taipei
Print_ISBN
0-7803-1859-5
Type
conf
DOI
10.1109/PESC.1994.349695
Filename
349695
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