Title :
Strong blue emission from isoelectronically P-doped GaN epilayers grown by gas source molecular beam epitaxy
Author :
Juang, F.S. ; Hong, Y.G. ; Kim, M.H. ; Simpkins, B. ; Tu, C.W. ; Tsai, J. ; Lai, W.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
The GaN-rich side of GaP/sub x/N/sub 1-x/ alloy exhibits a potentially large bandgap bowing with only a small amount of P incorporation. As a result, there could be interesting device applications. GaN:P layers were grown by molecular beam epitaxy (MBE) on GaN template layers grown by metalorganic chemical vapor deposition. GaP was used as the phosphorus source, P/sub 2/, and the N/sub 2/ plasma as the nitrogen source.
Keywords :
III-V semiconductors; X-ray chemical analysis; X-ray diffraction; atomic force microscopy; chemical beam epitaxial growth; energy gap; gallium compounds; phosphorus; photoluminescence; reflection high energy electron diffraction; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; spectral line breadth; GaN template layers; GaN-rich side; GaN:P; GaP; GaP/sub x/N/sub 1-x/ alloy; N source; N/sub 2/; N/sub 2/ plasma; P incorporation; P source; bandgap bowing; blue emission; device applications; gas source molecular beam epitaxy; isoelectronically P-doped GaN epilayers; metalorganic chemical vapor deposition; Chemical vapor deposition; Computer industry; Drives; Epitaxial growth; Gallium nitride; Gas industry; Lattices; Luminescence; Molecular beam epitaxial growth; Photonic band gap;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037834
