Strong blue emission from isoelectronically P-doped GaN epilayers grown by gas source molecular beam epitaxy

Author

Juang, F.S. ; Hong, Y.G. ; Kim, M.H. ; Simpkins, B. ; Tu, C.W. ; Tsai, J. ; Lai, W.C.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

211

Lastpage

212

Abstract

The GaN-rich side of GaP/sub x/N/sub 1-x/ alloy exhibits a potentially large bandgap bowing with only a small amount of P incorporation. As a result, there could be interesting device applications. GaN:P layers were grown by molecular beam epitaxy (MBE) on GaN template layers grown by metalorganic chemical vapor deposition. GaP was used as the phosphorus source, P/sub 2/, and the N/sub 2/ plasma as the nitrogen source.

Keywords

III-V semiconductors; X-ray chemical analysis; X-ray diffraction; atomic force microscopy; chemical beam epitaxial growth; energy gap; gallium compounds; phosphorus; photoluminescence; reflection high energy electron diffraction; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; spectral line breadth; GaN template layers; GaN-rich side; GaN:P; GaP; GaP/sub x/N/sub 1-x/ alloy; N source; N/sub 2/; N/sub 2/ plasma; P incorporation; P source; bandgap bowing; blue emission; device applications; gas source molecular beam epitaxy; isoelectronically P-doped GaN epilayers; metalorganic chemical vapor deposition; Chemical vapor deposition; Computer industry; Drives; Epitaxial growth; Gallium nitride; Gas industry; Lattices; Luminescence; Molecular beam epitaxial growth; Photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037834

Filename

1037834