DocumentCode :
2322246
Title :
Effects of heavy ion exposure on nanocrystal nonvolatile memory
Author :
Oldham, Timothy R. ; Suhail, Mohammed ; Kuhn, Peter ; Prinz, Erwin ; Kim, Hak ; LaBel, Kenneth A.
Author_Institution :
Radiat. Effects & Anal. Group, QSS Inc., Seabrook, MD, USA
fYear :
2004
fDate :
15-17 Nov. 2004
Firstpage :
39
Lastpage :
42
Abstract :
Advanced nanocrystal nonvolatile memories have been exposed to heavy ion bombardment. They appear to be promising candidates for future spacecraft electronics.
Keywords :
ion beam effects; nanostructured materials; semiconductor storage; heavy ion bombardment; heavy ion exposure effects; nanocrystal nonvolatile memory; radiation effects; spacecraft electronics; Aerodynamics; Aerospace electronics; Aerospace engineering; Circuit testing; Isolation technology; Nanocrystals; Nonvolatile memory; Radiation effects; Silicon; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2004
Print_ISBN :
0-7803-8726-0
Type :
conf
DOI :
10.1109/NVMT.2004.1380800
Filename :
1380800
Link To Document :
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