• DocumentCode
    2322246
  • Title

    Effects of heavy ion exposure on nanocrystal nonvolatile memory

  • Author

    Oldham, Timothy R. ; Suhail, Mohammed ; Kuhn, Peter ; Prinz, Erwin ; Kim, Hak ; LaBel, Kenneth A.

  • Author_Institution
    Radiat. Effects & Anal. Group, QSS Inc., Seabrook, MD, USA
  • fYear
    2004
  • fDate
    15-17 Nov. 2004
  • Firstpage
    39
  • Lastpage
    42
  • Abstract
    Advanced nanocrystal nonvolatile memories have been exposed to heavy ion bombardment. They appear to be promising candidates for future spacecraft electronics.
  • Keywords
    ion beam effects; nanostructured materials; semiconductor storage; heavy ion bombardment; heavy ion exposure effects; nanocrystal nonvolatile memory; radiation effects; spacecraft electronics; Aerodynamics; Aerospace electronics; Aerospace engineering; Circuit testing; Isolation technology; Nanocrystals; Nonvolatile memory; Radiation effects; Silicon; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium, 2004
  • Print_ISBN
    0-7803-8726-0
  • Type

    conf

  • DOI
    10.1109/NVMT.2004.1380800
  • Filename
    1380800
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2322246