• DocumentCode
    2322264
  • Title

    Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence

  • Author

    Georgakilas, Georgakilas ; Dimakis, E. ; Androulidaki, M. ; Tsagaraki, K. ; Kittler, G. ; Bellet-Almaric, E. ; Jalabert, D. ; Pelekanos, N.T.

  • Author_Institution
    Foundation for Research and Technology-Hellas
  • fYear
    2002
  • fDate
    15-20 Sept. 2002
  • Firstpage
    213
  • Lastpage
    214
  • Abstract
    We report on the growth by rf plasma-assisted molecular beam epitaxy (RF-MBE) of high quality quatemary InxAl1-xGa1-x-yN/GaN quantum well (QW) heterostructures, showing room temperature photoluminescence and lasing under optical pumping.
  • Keywords
    Gallium alloys; Gallium nitride; Molecular beam epitaxial growth; Optical pumping; Photoluminescence; Plasma temperature; Quantum well devices; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Molecular Beam Epitaxy, 2002 International Conference on
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-7581-5
  • Type

    conf

  • DOI
    10.1109/MBE.2002.1037835
  • Filename
    1037835
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2322264