Title :
Influence of growth interruptions at AlSb/InAs interfaces on the atomic morphology and electron transport properties
Author :
Sigmund, J. ; Saglam, M. ; Hartnagel, H.L. ; Miehe, G. ; Fuess, H.
Author_Institution :
Inst. fur Hochfrequenztechnik, Tech. Univ. Darmstadt, Germany
Abstract :
We have investigated the atomic morphology, the time-resolved reflection high-energy electron diffraction (RHEED), and the electron transport properties of unintentionally doped AlSb/InAs quantum well structures in dependence of several growth interruptions (Fig. 1) at the bottom interface.
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; reflection high energy electron diffraction; semiconductor growth; semiconductor quantum wells; surface morphology; transmission electron microscopy; AlSb-InAs; AlSb/InAs interfaces; RHEED; XTEM image; atomic morphology; electron transport properties; growth interruptions influence; quantum well structures; shutter sequence; time-resolved reflection high-energy electron diffraction; Diffraction; Electron mobility; Image reconstruction; Image resolution; Reflection; Surface morphology; Surface reconstruction; Temperature; Testing; Transmission electron microscopy;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037836
