DocumentCode
2322305
Title
Transportation phenomena of Sn-doped InSb thin films and application to Hall element
Author
Okamoto, Atsushi ; Shibasaki, Ichiro
Author_Institution
Corporate Res. & Dev. Adm., Asahi Kasei Corp., Shizuoka, Japan
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
219
Lastpage
220
Abstract
InSb is suitable material for magnetic sensor devices, because InSb has large electron mobility around room temperature. Moreover, Sn-doped InSb is more suitable, because temperature dependence of resistivity can be reduced. We try to understand the transportation phenomena in InSb films, and try to confirm the practical application of Hall elements devices using those films.
Keywords
Hall effect devices; III-V semiconductors; electrical resistivity; electron mobility; indium compounds; magnetic sensors; semiconductor doping; semiconductor thin films; tin; Hall elements devices; InSb:Sn; Sn-doped InSb thin films; electron mobility; magnetic sensor devices; resistivity; transportation phenomena; Conductivity; Electron mobility; Magnetic films; Magnetic materials; Magnetic sensors; Temperature dependence; Temperature sensors; Transistors; Transportation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037838
Filename
1037838
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