Title :
Transportation phenomena of Sn-doped InSb thin films and application to Hall element
Author :
Okamoto, Atsushi ; Shibasaki, Ichiro
Author_Institution :
Corporate Res. & Dev. Adm., Asahi Kasei Corp., Shizuoka, Japan
Abstract :
InSb is suitable material for magnetic sensor devices, because InSb has large electron mobility around room temperature. Moreover, Sn-doped InSb is more suitable, because temperature dependence of resistivity can be reduced. We try to understand the transportation phenomena in InSb films, and try to confirm the practical application of Hall elements devices using those films.
Keywords :
Hall effect devices; III-V semiconductors; electrical resistivity; electron mobility; indium compounds; magnetic sensors; semiconductor doping; semiconductor thin films; tin; Hall elements devices; InSb:Sn; Sn-doped InSb thin films; electron mobility; magnetic sensor devices; resistivity; transportation phenomena; Conductivity; Electron mobility; Magnetic films; Magnetic materials; Magnetic sensors; Temperature dependence; Temperature sensors; Transistors; Transportation; Voltage;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037838
