Polarity control of GaN/AlGaN/GaN heterostructure grown by molecular beam epitaxy

Author

Park, Y.S. ; Lee, H.S. ; Na, J.H. ; Kim, H.J. ; Oh, C.S. ; Kang, T.W. ; Oh, J.E.

Author_Institution

Quantum-functional Semicond. Res. Center, Dongguk Univ., Seoul, South Korea

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

225

Lastpage

226

Abstract

The importance of the polar orientation of the surface was not obvious in the case of GaN epilayer grown on a nonpolar substrate like sapphire. For rf-MBE growth the published results show that high temperature AlN buffer layers lead to Ga polar films, while GaN buffer layers lead to N polar films. There is a lack of general idea how the polarity is determined and how the polarity can be changed, both from N polarity to Ga polarity and from Ga to N polarity.

Keywords

aluminium compounds; gallium compounds; molecular beam epitaxial growth; polar semiconductors; semiconductor epitaxial layers; Ga polar films; Ga polarity; GaN buffer layers; GaN epilayer; GaN-AlGaN; GaN/AlGaN/GaN heterostructure; N polar films; N polarity; high temperature AlN buffer layers; nonpolar substrate; polar orientation; polarity control; radiofrequency-molecular beam epitaxy growth; Aluminum gallium nitride; Artificial intelligence; Buffer layers; Capacitance-voltage characteristics; Etching; Gallium nitride; Molecular beam epitaxial growth; Rough surfaces; Surface roughness; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037841

Filename

1037841