Homoepitaxial growth of GaN/(In,Ga,Al)N MQWs on M-GaN (non-polar) and C-GaN (polar) substrates

Author

Bhattacharyya, A. ; Friel, I. ; Moustakas, T.D. ; Maruska, H.P. ; Hill, D.W. ; Gallagher, J.J. ; Chou, M.M.C. ; Chai, B.

Author_Institution

Dept. of Electr. Eng., Boston Univ., MA, USA

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

227

Lastpage

228

Abstract

MQWS based on quaternary III-nitride alloys are likely to be the active region of UV emitters as well as other optical devices like modulators. The majority of reported work so far is based on GaN/AlGaN MQWs, grown heteroepitaxially along the polar direction [0001] on a variety of substrates. There is also some recent work on growing such MQWs heteroepitaxially along the non-polar [10-10] direction on LiAlO/sub 2/ substrates.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; molecular beam epitaxial growth; optical modulation; semiconductor growth; semiconductor quantum wells; C-GaN polar substrates; GaN; GaN-(InGaAl)N; GaN/(In,Ga,Al)N multiple quantum wells; LiAlO/sub 2/; LiAlO/sub 2/ substrates; active region; homoepitaxial growth; modulators; optical devices; polar direction; radiofrequency-plasma assisted molecular beam epitaxy; ultraviolet emitters; Aluminum gallium nitride; Gallium nitride; Lattices; Optical devices; Optical modulation; Photonic crystals; Physics; Quantum well devices; Substrates; Surface reconstruction;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037842

Filename

1037842