Title :
Design, fabrication and characterization of high density radiation hardened SONOS/CMOS EEPROMs for space and military systems
Author :
Adams, Dennis A. ; Smith, Joseph T. ; Murray, James R. ; White, Marvin H. ; Wrazien, Stephen
Author_Institution :
Northrop Grumman Corp., Baltimore, MD, USA
Abstract :
We present the design, fabrication and characterization of a radiation-hardened, SONOS/CMOS 1 Mb EEPROM for space and military systems. An advanced 0.35micron, 4-level tungsten plug, CMP, high-density interconnect SONOS/CMOS technology will be described for 16 Mb SONOS/CMOS EEPROMs. SONOS/CMOS radiation-hardened EEPROMs are flight-qualified and currently employed in advanced space-borne and military systems.
Keywords :
CMOS memory circuits; EPROM; chemical mechanical polishing; integrated circuit interconnections; military systems; space vehicle electronics; CMOS EEPROM; CMP; SONOS EEPROM; advanced space-borne systems; high density radiation hardened EEPROM; high-density interconnect technology; military systems; space systems; CMOS technology; EPROM; Fabrication; Laboratories; Nonvolatile memory; Radiation hardening; SONOS devices; Silicon on insulator technology; Space missions; Space technology;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2004
Print_ISBN :
0-7803-8726-0
DOI :
10.1109/NVMT.2004.1380805
