Title :
Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs
Author :
Katzer, D.S. ; Storm, D.F. ; Binari, S.C. ; Roussos, J.A. ; Shanabrook, B.V. ; Glaser, E.R.
Author_Institution :
Electron. Sci. & Technol. Div., Naval Res. Lab., Washington, DC, USA
Abstract :
Group III-nitride semiconductors are promising materials for high-power microwave transistors. However, several materials issues remain to be solved. For example, conducting buffer or interfacial layers are a frequently observed problem in AlGaN/GaN HEMTs grown by both MOCVD and MBE. These conducting layers can cause poor pinch-off characteristics and poor inter-device isolation.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; leakage currents; molecular beam epitaxial growth; semiconductor growth; AlGaN-GaN; AlGaN/GaN high electron mobility transistors; Be-doped GaN buffer layers; GaN:Be; conducting buffer; conducting layers; group III-nitride semiconductors; high-power microwave transistors; inter-device isolation; interfacial layers; metal organic chemical vapour deposition; molecular beam epitaxy; pinch-off characteristics; Aluminum gallium nitride; Buffer layers; Conducting materials; Gallium nitride; HEMTs; MOCVD; MODFETs; Microwave transistors; Molecular beam epitaxial growth; Semiconductor materials;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037845
