GaAs-based red-emitting InAlAs/AlGaAs quantum dots and quantum-dot laser

Author

Liu, H.Y. ; Airey, R.J. ; Steer, M.J. ; Houston, P.A. ; Sellers, Ian R. ; Mowbray, D.J.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

239

Lastpage

240

Abstract

Semiconductor quantum dots (QDs) are the subject of extensive study due to their promising applications in novel optoelectronics devices. However relatively few studies of red-emitting QDs have been reported due mainly to the difficulty in fabricating high-quality InAlAs/AlGaAs on GaAs substrates. We study the effect of growth temperature on the optical and structural properties of InAlAs/AlGaAs QDs. With increasing substrate temperature from 530 to 560/spl deg/C, a significant improvement in the QD material quality is observed. In addition at room temperature, ground state lasing is demonstrated for a laser with six InAlAs/AlGaAs QD layers grown at 560/spl deg/C.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; photoluminescence; quantum dot lasers; 530 to 560 degC; GaAs; GaAs substrates; GaAs-based red-emitting InAlAs/AlGaAs quantum dot laser; InAlAs-AlGaAs; ground state lasing; optoelectronics devices; quantum dots material quality; substrate temperature; Astronomy; Indium compounds; Land surface temperature; Light emitting diodes; Quantum dot lasers; Quantum dots; Spontaneous emission; Substrates; Threshold current; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037848

Filename

1037848