Room temperature 1.3 /spl mu/m emission from self-assembled GaAs/GaSb quantum dots

The formation of self-assembled quantum dots (SAQDs) during the growth of epitaxial materials is of great interest for optical applications due to the high density of dots which can be achieved in comparison with lithographic patterning techniques. Much of the research in this field has been directed towards the systems which display a type-I band alignment such as In(Ga)As/GaAs. In these structures both the electrons and holes are confined within the dots themselves.