In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE

Author

Badano, G. ; Zhao, J. ; Sivananthan, S. ; Aoki, T. ; Smith, D.

Author_Institution

Illinois Univ., Chicago, IL, USA

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

251

Lastpage

252

Abstract

We constructed an optical model to characterize with a spectroscopic ellipsometer (SE) the nucleation of Hg/sub 1-x/Cd/sub x/Te (MCT) grown by molecular beam epitaxy on CdZn/sub 0.035/Te (CZT) substrates. Substrates of 2/spl times/2cm/sup 2/ area were loaded into a RIBER 32P chamber and heat cleaned to remove oxide according to a standard procedure. SE spectra were recorded during the cleaning procedure and the entire growth process.

Keywords

II-VI semiconductors; cadmium compounds; ellipsometry; mercury compounds; molecular beam epitaxial growth; nucleation; reflection high energy electron diffraction; scanning electron microscopy; semiconductor growth; surface cleaning; transmission electron microscopy; CdZn/sub 0.035/Te; CdZn/sub 0.035/Te substrates; Hg/sub 1-x/Cd/sub x/Te; HgCdTe; RHEED spectrum; cleaning procedure; cross-sectional SEM characterization; cross-sectional TEM characterization; growth process; in-situ ellipsometric characterization; molecular beam epitaxy; nucleation conditions; optical model; spectroscopic ellipsometer spectra; Dielectrics; Molecular beam epitaxial growth; Optical recording; Oscillators; Rough surfaces; Substrates; Surface fitting; Surface morphology; Surface roughness; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037854

Filename

1037854