Correlations between growth mode and structural and optical properties of GaInNAs quantum wells grown by MBE

Author

Chauveau, J.-M. ; Trampert, A. ; Tournie, E. ; Pinault, M.-A. ; Ploog, K.H.

Author_Institution

Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

265

Lastpage

266

Abstract

The GaInNAs (GINA) quaternary alloy has been intensively studied in the last years because of its promises for developing GaAs-based long-wavelength laser application. Indeed, high performance GINA-based laser structures have been demonstrated in the range of 1.3 /spl mu/m.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum wells; transmission electron microscopy; 1.3 micron; GaAs-based long-wavelength laser application; GaInNAs; GaInNAs quantum wells; X-ray reciprocal space mapping techniques; growth mode; high performance GaInNAs-based laser structures; high-resolution transmission electron microscopy; optical properties; photoluminescence spectroscopy; solid-source MBE; structural properties; Electrons; Gallium arsenide; Indium gallium arsenide; Laser applications; Laser modes; Laser transitions; Molecular beam epitaxial growth; Optical films; Plasma temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037861

Filename

1037861