Improved uniformity of self-organized In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As quantum wires grown on (775)B-oriented InP substrate by molecular beam epitaxy

Recently, we have reported that high-density self-organized In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As quantum wire (QWR) structures can be fabricated on (775)B-oriented [8.5/spl deg/ off [111]B toward [110]] InP substrate by molecular beam epitaxy (MBE. Their emitting wavelengths were 1.2/spl sim/1.3 /spl mu/m at 12 K. The uniformity of the (775)B In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As QWRs, however, was rather poor, because both the lower In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As interface and upper In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As interface corrugated with different period and different vertical amplitude with each other. We improved the uniformity of the (775)B QWRs by flattening surface of In/sub 0.52/Al/sub 0.48/As barrier layers.