Title :
Role of annealing process on formation of self-organized InGaAs quantum wires on GaAs [100]
Author :
Mano, T. ; Notzel, R. ; Hamhuis, G.J. ; Eijkemans, T.J. ; Wolter, J.H.
Author_Institution :
Eindhoven Univ. of Technol., Netherlands
Abstract :
Recently, it has been reported that self-organized InGaAs quantum wires (QWRs) can be formed on GaAs [100] by molecular beam epitaxy (MBE). Although the formation mechanism was mainly attributed to elongated QD formation by high temperature growth in a superlattice (SL) structure, the detailed formation mechanism was still unclear. In this study, we found that annealing is the crucial process for the formation of QWRs in addition to SL growth.
Keywords :
X-ray diffraction; annealing; atomic force microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; semiconductor quantum wires; semiconductor superlattices; 540 C; AFM; GaAs; GaAs [100]; InGaAs; MBE; QWRs; X-ray diffraction spectra; XRD spectra; annealing process role; around; atomic force microscopy; elongated QD formation; high temperature growth; post-growth strain reduction; self-organized InGaAs quantum wires formation; solid source MBE; solid source molecular beam epitaxy; superlattice structure; Annealing; Capacitive sensors; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Optical reflection; Substrates; Temperature; Wires; X-ray scattering;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037868
