DocumentCode
2322788
Title
Desorption of InAs quantum dots
Author
Heyn, C. ; Beyer, S. ; Hansen, W.
Author_Institution
Inst. fur Angewandte Phys., Hamburg Univ., Germany
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
283
Lastpage
284
Abstract
We study the post-growth lifetime of InAs quantum dots vs. arsenic flux and temperature by electron diffraction and a layer-by-layer desorption model. The results are employed to calculate the In sticking coefficient during growth.
Keywords
III-V semiconductors; crystal growth from solution; desorption; indium compounds; reflection high energy electron diffraction; semiconductor growth; semiconductor quantum dots; surface morphology; In sticking coefficient; InAs; InAs quantum dots; RHEED intensity; desorption; post-growth lifetime study; Diffraction; Electrons; Indium; Monitoring; Quantum dots; Surface morphology; Switches; Temperature dependence; Time measurement; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037870
Filename
1037870
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