Customized nanostructures MBE growth: from quantum dots to quantum rings

Author

Granados, D. ; González, L. ; González, Y. ; Garcia, J.M.

Author_Institution

Instituto de Microelectron. de Madrid, Spain

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

287

Lastpage

288

Abstract

Studies for growing control methods of quantum dots (QD) sizes and dot/cap intermixing for tuning QD optical properties have particular interest nowadays. Morphological shape surface changes of QD due to thin capping overgrowth of GaAs under different growing conditions has been reported by different authors [1, 2] as a powerful technique to obtain different nanostructures. In this work, control over shape and optical emission of molecular beam epitaxy (MBE) thin capping overgrown InAs QD on GaAs[100] have been studied, using ex-situ Atomic Force Microscopy (AFM) and Photoluminescence (PL).

Keywords

III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; nanostructured materials; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; surface morphology; 500 to 590 C; GaAs; InAs; MBE; customized nanostructures MBE growth; dot/cap intermixing; ex-situ AFM; ex-situ atomic force microscopy; molecular beam epitaxy thin capping; morphological shape surface changes; photoluminescence; quantum dots; quantum rings; Atom optics; Atomic force microscopy; Molecular beam epitaxial growth; Nanostructures; Optical control; Optical microscopy; Quantum dots; Shape control; Size control; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037872

Filename

1037872